HFB1N60 - N-Channel MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu.

SemiHow

Datasheet Details

Part number	HFB1N60
Manufacturer	SemiHow
File Size	176.42 KB
Description	N-Channel MOSFET
Datasheet	HFB1N60 Datasheet
Additional preview pages of the HFB1N60 datasheet.

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Full PDF Text Transcription

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HFB1N60 Nov 2007 HFB1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3.

Published: Jun 7, 2015 |