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HDSE8U60G - Ultra Fast Recovery Diode

Description

With excellent performance in reverse recovery time, switching speed and rated current, HDSE8U60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification.

Features

  •  High breakdown voltage  High speed switching  Avalanche Energy Rated  Planar Construction.

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Datasheet Details

Part number HDSE8U60G
Manufacturer SemiHow
File Size 453.18 KB
Description Ultra Fast Recovery Diode
Datasheet download datasheet HDSE8U60G Datasheet

Full PDF Text Transcription

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HDSE8U60G May 2015 HDSE8U60G Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated current, HDSE8U60G can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. Features  High breakdown voltage  High speed switching  Avalanche Energy Rated  Planar Construction Applications  LED Power & Other Charger SMPS  PFC  General Purpose Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectifier Forward Current IFSM Non-Rectifier Peak Surge Current @8.
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