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HDS20U30GW - Ultra Fast Recovery Diode

Description

With excellent performance in reverse recovery time, switching speed and rated current, HDS20U30GW can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification.

Features

  •  High Breakdown Voltage  High Speed Switching May 2015 VRRM = 300 V IF = 2 x 10A trr = 21nS TO-220F 12 3 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage IF(AV) Average Rectifier Forward Current (Per Diode) (Total Diode) IFSM TJ, TSTG Non-Rectifier Peak Surge Current @8.3ms (Per Diode) Operating and Storage Temperature Range Value 300 10 20 100 -55 to +150 Electrical Characteristics (Per Diode) Sym.

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Datasheet Details

Part number HDS20U30GW
Manufacturer SemiHow
File Size 398.77 KB
Description Ultra Fast Recovery Diode
Datasheet download datasheet HDS20U30GW Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HDS20U30GW HDS20U30GW Ultra Fast Recovery Diode General Description With excellent performance in reverse recovery time, switching speed and rated current, HDS20U30GW can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. Features  High Breakdown Voltage  High Speed Switching May 2015 VRRM = 300 V IF = 2 x 10A trr = 21nS TO-220F 12 3 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage IF(AV) Average Rectifier Forward Current (Per Diode) (Total Diode) IFSM TJ, TSTG Non-Rectifier Peak Surge Current @8.
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