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HCS60R750V - N-Channel Super Junction MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 7 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Datasheet Details

Part number HCS60R750V
Manufacturer SemiHow
File Size 268.92 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R750V Datasheet

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Full PDF Text Transcription

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HCS60R750V HCS60R750V 600V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 7 A TO-220F 12 3 1.Gate 2. Drain 3.
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