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HCI70R600 - 700V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 7.3 0.6 16 Unit V A Ω nC.

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Datasheet preview – HCI70R600

Datasheet Details

Part number HCI70R600
Manufacturer SemiHow
File Size 297.69 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCI70R600 Datasheet
Additional preview pages of the HCI70R600 datasheet.

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Full PDF Text Transcription

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HCI70R600 July 2021 HCI70R600 700V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 750 7.3 0.
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