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HCI60R290 - 600V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 12.9 0.29 27 Unit V A Ω nC.

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Datasheet preview – HCI60R290

Datasheet Details

Part number HCI60R290
Manufacturer SemiHow
File Size 231.72 KB
Description 600V N-Channel Super Junction MOSFET
Datasheet download datasheet HCI60R290 Datasheet
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Full PDF Text Transcription

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HCI60R290 Oct 2019 HCI60R290 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 12.9 0.
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