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BUL74A - NPN Transistor

Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter.

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Datasheet preview – BUL74A

Datasheet Details

Part number BUL74A
Manufacturer Seme LAB
File Size 19.92 KB
Description NPN Transistor
Datasheet download datasheet BUL74A Datasheet
Additional preview pages of the BUL74A datasheet.

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Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL74A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. 2.54 2.
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