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BUL705 - High voltage fast-switching NPN Power Transistor

Datasheet Summary

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220.

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Datasheet Details

Part number BUL705
Manufacturer STMicroelectronics
File Size 269.23 KB
Description High voltage fast-switching NPN Power Transistor
Datasheet download datasheet BUL705 Datasheet
Additional preview pages of the BUL705 datasheet.

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Full PDF Text Transcription

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BUL705 High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ ■ ■ NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
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