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SSE9575 - P-Channel Enhancement Mode MosFET

Description

The SSE9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.

Features

  • z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic.

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Datasheet Details

Part number SSE9575
Manufacturer SeCoS
File Size 636.78 KB
Description P-Channel Enhancement Mode MosFET
Datasheet download datasheet SSE9575 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSE9575 Elektronische Bauelemente -15 A, -60 V, RDS(ON) 90 mΩ P-Channel Enhancement Mode Power Mos.FET DESCRIPTION The SSE9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. FEATURES z z z Simple Drive Requirement Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS REF. A b c D E L4 www.DataSheet.co.kr Millimeter Min. Max. 4.40 0.76 0.36 8.60 9.80 14.7 6.20 4. 80 1.00 0.50 9.00 10.4 15.3 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.17 13.25 2.60 3.71 2.60 1.45 1.47 14.25 2.89 3.96 2.80 2.54 REF.
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