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SSE90P06-08P - N-Channel Enhancement Mode MosFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G E A S F H I J K L U X M P.

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Datasheet Details

Part number SSE90P06-08P
Manufacturer SeCoS
File Size 116.79 KB
Description N-Channel Enhancement Mode MosFET
Datasheet download datasheet SSE90P06-08P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSE90P06-08P Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. D C TO-220P B R T FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-220P saves board space. Fast Switch Speed. High performance trench technology. G E A S F H I J K L U X M P APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P-Channel D2 www.DataSheet.co.
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