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SSD45N03 - N-Channel Enhancement Mode Power Mos.FET

Description

The SSD45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • RoHS Compliant.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Speed D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Sy.

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Datasheet Details

Part number SSD45N03
Manufacturer SeCoS
File Size 577.55 KB
Description N-Channel Enhancement Mode Power Mos.FET
Datasheet download datasheet SSD45N03 Datasheet

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Full PDF Text Transcription

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SSD45N03 Elektronische Bauelemente 45A, 25V,RDS(ON)9m£[ N-Channel Enhancement Mode Power Mos.FET Description TO-252 The SSD45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * RoHS Compliant * Low Gate Charge * Simple Drive Requirement * Fast Switching Speed D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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