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SSD408 - N-Channel Enhancement Mode Power Mos.FET

Description

The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications.

Features

  • Simple Drive Requirement.
  • Lower On-resistance.
  • Fast Switching Characteristic D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol.

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Datasheet Details

Part number SSD408
Manufacturer SeCoS
File Size 424.68 KB
Description N-Channel Enhancement Mode Power Mos.FET
Datasheet download datasheet SSD408 Datasheet

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Full PDF Text Transcription

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SSD408 Elektronische Bauelemente 18A, 30V,RDS(ON)18m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. Features * Simple Drive Requirement * Lower On-resistance * Fast Switching Characteristic D REF. A B C D E F S G S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.
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