High breakdown voltage and high reliability. Fast switching speed.
Wide ASO.
Adoption of MBIT process. www. DataSheet4U. com.
Package Dimensions
unit : mm 2010C
[TT2194]
10.2 3.6 5.1 2.7 6.3 4.5 1.3
18.0
5.6
1.2 14.0 0.8
15.1
0.4
1 2 3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation.
Full PDF Text Transcription for TT2194 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TT2194. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN0000 TT2194 NPN Triple Diffused Planar Silicon Transistor TT2194 Switching Regulator Applications Preliminary Features High breakdown voltage and hig...
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lator Applications Preliminary Features High breakdown voltage and high reliability. Fast switching speed. • Wide ASO. • Adoption of MBIT process. www.DataSheet4U.com • • Package Dimensions unit : mm 2010C [TT2194] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤300µs, duty cycle≤10% Conditions 2.
TT2194 Datasheet
