Package Dimensions
unit : mm 2079D
[TT2170LS]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.
Full PDF Text Transcription for TT2170LS (Reference)
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TT2170LS. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENN7670 TT2170LS NPN Triple Diffused Planar Silicon Transistor TT2170LS Color TV Horizontal Deflection Output Applications Features • • • • • Package Di...
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orizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2079D [TT2170LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 2.55 2.55 2.
TT2170LS Datasheet
