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LC35V256EM - 256K (32K words x 8 bits) SRAM Control pins: OE and CE

Features

  • Supply voltage range: 3.0 to 3.6 V.
  • Access time: 70 ns (maximum).
  • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C).
  • Operating temperature:.
  • 10 to +70°C.
  • Data retention voltage: 2.0 to 3.6 V.
  • All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC).
  • Input/output shared function pins, 3-state output pins.
  • No clock required (fully static circuits).
  • Package 28-pin SOP (450 mil) plastic package: LC35V256EM-70W 2.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Control inputs include OE for fast memory access and CE for power saving and device selection. This makes these devices optimal for systems that require low power or battery backup, and makes memory expansion easy. The ultralow standby current allows these devices to be used with capacitor backup as well. Package Dimensions unit: mm 3187A-SOP28D [LC35V256EM-70W] 28 15 0.15 1 18.
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