Datasheet4U Logo Datasheet4U.com

LC35V1000BTS-70U - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Features

  • Low-voltage operation: 3.0 to 3.6 V.
  • Wide operating temperature range:.
  • 40 to +85°C.
  • Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.
  • Low current drain Standby mode: 0.05 µA (typical.
  • ) at Ta = +25°C.
  • : When VCC = 3.0 V 10.0 µA (maximum) at Ta = +70°C 20.0 µA (maximum) at Ta = +85°C.
  • Data retention voltage: 2.0 to 3.6 V.
  • No clock required (fully static circuits).
  • Input/output shared function pins, 3-st.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN*7056 CMOS IC LC35V1000BM, BTS-70U Asynchronous Silicon Gate 1M (131,072 words ×8 bits) SRAM Preliminary Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating temperature range.This makes them optimal for use in systems that require high speed, low power, and battery backup. They also support easy memory expansion. Package Dimensions unit: mm 3205A-SOP32 [LC35V1000BM-70U] 32 17 0.8 11.2 3.1max 0.15 0.2 (2.7) 20.5 Features • Low-voltage operation: 3.0 to 3.
Published: |