High-density mounting. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature
VDSS VGSS
ID IDP PD T.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K4181. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA0999 2SK4181 SANYO Semiconductors DATA SHEET 2SK4181 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resista...
View more extracted text
eneral-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Avalanche resistance guarantee. • For use of lighting & etc. • High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*1) 525 V ±30 V 7.
K4181 Datasheet
