Attachment workability is good by Mica-less package.
Avalanche resistance guarantee. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
Full PDF Text Transcription for K4123LS (Reference)
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K4123LS. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet.co.kr Ordering number : ENA0826 2SK4123LS SANYO Semiconductors DATA SHEET 2SK4123LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications F...
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Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.
K4123LS Datasheet
