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Ordering number:EN3171
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1575/2SC4080
High-Frequency Amplifier, Wide-Band Amplifier Applications
Features
· High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent
high-frequency characteristic. · Adoption of FBET process.
Package Dimensions
unit:mm 2038
[2SA1575/2SC4080]
E : Emitter C : Collector B : Base
( ) : 2SA1575
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Conditions Mounted on ceramic board (250mm2×0.