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C3790 - 2SC3790

Datasheet Summary

Features

  • High breakdown voltage (VCEO≥300V).
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP).
  • Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current.

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Datasheet Details

Part number C3790
Manufacturer Sanyo
File Size 41.38 KB
Description 2SC3790
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Full PDF Text Transcription

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Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.
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