C3710A - 2SC3710A

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Toshiba Semiconductor

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Part number	C3710A
Manufacturer	Toshiba Semiconductor
File Size	170.23 KB
Description	2SC3710A
Datasheet	C3710A Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A Collector power dissipation (Tc = 25°C) PC 30 W JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.

Published: Jun 3, 2015 |