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BFL4004 - N-Channel Silicon MOSFET

Features

  • ON-resistance RDS(on)=1.9Ω (typ. ).
  • Input capacitance Ciss=710pF (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc.
  • 1 IDpack.
  • 2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition).
  • 3 PW≤10μs, duty cycle≤1% Tc=25°C.

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Full PDF Text Transcription

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Ordering number : ENA1796 BFL4004 SANYO Semiconductors DATA SHEET BFL4004 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=1.9Ω (typ.) • Input capacitance Ciss=710pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS IDc*1 IDpack*2 IDP PD Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 800 V ±30 V 6.5 A 4.3 A 13 A 2.
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