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BFL4001 - N-Channel Power MOSFET

Features

  • ON-resistance RDS(on)=2.1Ω (typ. ).
  • 10V drive.
  • Input capacitance Ciss=850pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A A.

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Datasheet Details

Part number BFL4001
Manufacturer onsemi
File Size 184.70 KB
Description N-Channel Power MOSFET
Datasheet download datasheet BFL4001 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA1638B BFL4001 N-Channel Power MOSFET 900V, 6.5A, 2.7Ω, TO-220F-3FS http://onsemi.com Features • ON-resistance RDS(on)=2.1Ω (typ.) • 10V drive • Input capacitance Ciss=850pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only by maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition)*3 6.5 A 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD Tc=25°C (Our ideal heat dissipation condition)*3 2.
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