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B1131 - 2SB1131

Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity.
  • Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta =.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
B1135 2SB1135
B1136 2SB1136
B1118 2SB1118
B1119 2SB1119
B1120 2SB1120

Full PDF Text Transcription

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Ordering number:2420B PNP Epitaxial Planar Silicon Transistor 2SB1131 Strobe, High-Current Switching Applications Applications · Strobes, power supplies, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching time.
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