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VEC2415 - N-Channel Silicon MOSFET

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA1713 VEC2415 SANYO Semiconductors DATA SHEET VEC2415 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting high 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 60 ±20 3 12 0.9 1.
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