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VEC2408 - N-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA0567 VEC2408 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET VEC2408 Features • • • • • General-Purpose Switching Device Applications The best suited for load switching applications. Low ON-resistance. Composite type facilitating high-density mounting. 1.8V drive. Mounting high 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 20 ±12 3.5 14 0.9 1.
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