FTD2017M - N-Channel Silicon MOSFET

SANYO (now Panasonic)

Key Features

N-Channel Silicon MOSFET General-Purpose Switching Device.

FTD2017M n-channel silicon mosfet by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	FTD2017M
Manufacturer	SANYO (now Panasonic)
File Size	72.08 KB
Description	N-Channel Silicon MOSFET
Datasheet	FTD2017M Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
FTD2017	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.8mm) 1unit When mounted on ceramic substrate (1000mm 2✕0.8mm) Conditions Ratings 20 ±12 6 40 1.2 1.