Datasheet4U Logo Datasheet4U.com

FTD2011 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • s.
  • RDS(ON)=30mΩ Max. @VGS=4V.
  • RDS(ON)=45mΩ Max. @VGS=2.5V D1 S1 S1 G1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 D2 7 : Source2 S2 8 : Drain2 S2 G2.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty c.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FTD2011 N-Channel MOSFET Sanyo Semicon Device
FTD2011 25V Dual N-Channel MOSFET VBsemi
FTD2011A N-Channel MOSFET Sanyo Semicon Device
FTD2012 N-Channel MOSFET Sanyo Semicon Device
FTD2013 N-Channel MOSFET Sanyo Semicon Device

Other Datasheets by Kexin Semiconductor

Part Number Description
FTD2019 Dual N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET Dual N-Channel Enhancement Mode MOSFET FTD2011 ■ Features ● RDS(ON)=30mΩ Max. @VGS=4V ● RDS(ON)=45mΩ Max. @VGS=2.5V D1 S1 S1 G1 TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 D2 7 : Source2 S2 8 : Drain2 S2 G2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous -Pulsed (NOTE 1) Power Dissipation (NOTE 2) Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm2×0.8mm) Symbol VDS VGS ID IDM PD RθJA Tj.Tstg Rating 20 ±10 5 20 1.3 96 -55 to 150 Unit V V A A W ℃/W ℃ 1 www.kexin.com.