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D1065 - 2SD1065

Key Features

  • Low-saturation collector-to-emitter voltage : VCE(sat) =.
  • 0.5V max.
  • Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Elec.

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Full PDF Text Transcription for D1065 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D1065. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications · Relay drivers, high-speed inverters, conve...

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Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. · Wide ASO leading to high resistance to breakdown.