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D1061 - 2SD1061

Key Features

  • Low saturation voltage : VCE(sat)=(.
  • )0.4V max.
  • Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Par.

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Full PDF Text Transcription for D1061 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D1061. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications · Universal high current switching as solenoid...

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plications Applications · Universal high current switching as solenoid driving, high speed inverter and converter. Features · Low saturation voltage : VCE(sat)=(–)0.4V max.