C4257 - 2SC4257

Features

High breakdown voltage.
Small Cob.
Wide ASO.
High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4257] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO V.

Sanyo Semicon Device

Datasheet Details

Part number	C4257
Manufacturer	Sanyo Semicon Device
File Size	79.53 KB
Description	2SC4257
Datasheet	C4257 Datasheet
Additional preview pages of the C4257 datasheet.

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Full PDF Text Transcription

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Ordering number:EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage. · Small Cob. · Wide ASO. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4257] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15.1 0.8 0.4 1 2 3 2.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.55 2.55 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Ratings 1500 1200 5 30 100 1.

Published: Sep 1, 2014 |