Datasheet4U Logo Datasheet4U.com

BTD4M - Bidirectional Diode

Features

  • Small size and light weight.
  • DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2.
  • 40 to +125.
  • 40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakover Current Temperature Coefficient of Breakover Voltage Pe.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTD4512F3 Low Vcesat NPN Epitaxial Planar Transistor CYStech
BTD1304A3 NPN Epitaxial Planar Transistor CYStech
BTD1304N3 NPN Epitaxial Planar Transistor CYStech
BTD1383L3 NPN Epitaxial Planar Transistor Cystech Electonics
BTD1383M3 NPN Transistor Cystech Electonics Corp

Other Datasheets by SANYO (now Panasonic)

Part Number Description
BTD4 Bidirectional Diode

Full PDF Text Transcription

Click to expand full text
Ordering number :EN821C BTD4M Silicon Planar Type Bidirectional Diode Features · Small size and light weight. · DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakover Current Temperature Coefficient of Breakover Voltage Peak Output Voltage VP 5 Symbol VBO1(VBO2) ∆VBO |VBO1–VBO2| IBO1(IBO2) 0.1 Conditions Ratings min 29 typ max 37 3 50 Unit V V µA %/˚C V Basic Circuit Basic Characteristic SANYO Electric Co.,Ltd.
Published: |