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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD4512F3
Spec. No. : C821F3 Issued Date : 2011.12.02 Revised Date : Page No. : 1/ 8
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage • Fast switching speed • High current gain characteristic • Large current capability • RoHS compliant package
Applications
• CCFL drivers • Voltage regulators • Relay drivers • High efficiency low voltage switching applications
Symbol
BTD4512F3
Outline
TO-263
B：Base C：Collector E：Emitter
BTD4512F3
BCE
CYStek Product Specification
CYStech Electronics Corp.
Spec. No.
BTD4512F3 Datasheet
