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2SC3495 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET process.
  • High DC current gain (hFE=500 to 2000).
  • High breakdown voltage (VCEO≥100V).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V).
  • Small Cob (Cob=1.8pF typ). Package Dimensions unit:mm 2003A [2SC3495] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · AF amplifier, various driver, muting circuit. Features · Adoption of FBET process. · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Small Cob (Cob=1.8pF typ).