High-speed switching
+0.2 9.70 -0.2
High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage (Collector open) Base current Collector current Peak.
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SMD Type
Transistors
NPN Silicon Triple Diffused Transistor 2SC3496A
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
High-speed switching
+0.2 9.70 -0.2
High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.