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2SB1268 - PNP/NPN Epitaxial Planar Silicon Transistors

Features

  • Suitable for sets whose height is restricted.
  • Low collector to emitter saturation voltage. Package Dimensions unit:mm 2049B [2SB1268/2SD1904] ( ) : 2SB1268 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions E : Emitter C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage.
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