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2SB1267 - PNP/NPN Epitaxial Planar Silicon Transistors

Features

  • Suitable for sets whose height is restricted.
  • Low collector to emitter saturation voltage : VCE(sat)=.
  • 0.5V (PNP), 0.4V (NPN) max.
  • Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emitter C : Collector B : Base SANYO :TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dis.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters and other general high-current switching. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity.
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