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2SB1127 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity.
  • Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Tstg Electrical Chara.

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Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications · Strobe, power supplies, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed.