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2SB1122 - Bipolar Transistor

Key Features

  • Adoption of FBET process.
  • Ultrasmall size making it easy to provide high-density hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --60 V --50 V --5 V --1 A --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are st.

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Datasheet Details

Part number 2SB1122
Manufacturer onsemi
File Size 163.71 KB
Description Bipolar Transistor
Datasheet download datasheet 2SB1122 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2040C 2SB1122 Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP http://onsemi.com Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --60 V --50 V --5 V --1 A --2 A Continued on next page. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.