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LE25FV051T - 512K Serial Flash EEPROM

Description

The LE25FV051T is a 64K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.

The LE25FV051T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.

Features

  • CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max. ) Standby Current: 20 µA (Max. ) Serial Peripheral Interface (S. P. I. ) mode 0,3 High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max. ) End of Write Detection: Status Register Read Hardware Data Protection P.

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Datasheet Details

Part number LE25FV051T
Manufacturer Sanyo Electric
File Size 108.03 KB
Description 512K Serial Flash EEPROM
Datasheet download datasheet LE25FV051T Datasheet

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Full PDF Text Transcription

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Preliminary Specifications CMOS LSI LE25FV051T 512k (64k words × 8bits) Serial Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0,3 High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Self-timed Erase and Programming Byte Programming: 35 µs (Max.) End of Write Detection: Status Register Read Hardware Data Protection Packages Available: MSOP8(225mil) Product Description The LE25FV051T is a 64K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.
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