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SW8N65K - N-channel MOSFET

Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 0.53Ω)@VGS=10V.
  • Low Gate Charge (Typ 20nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW8N65K
Manufacturer Samwin
File Size 675.97 KB
Description N-channel MOSFET
Datasheet download datasheet SW8N65K Datasheet

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Full PDF Text Transcription

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SW8N65K N-channel Enhanced mode TO-262 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 0.53Ω)@VGS=10V  Low Gate Charge (Typ 20nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:LED,Charger,PC Power TO-262 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 8A RDS(ON) : 0.
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