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SW8N60 - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 1.3 Ω)@VGS=10V.
  • Gate Charge (Typ 38nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.5A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW8N60
Manufacturer SAMWIN
File Size 605.79 KB
Description N-channel MOSFET
Datasheet download datasheet SW8N60 Datasheet

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Full PDF Text Transcription

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SAMWIN SW8N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.5A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
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