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SW47N65K
N-channel Enhanced mode TO-247 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 60mΩ)@VGS=10V Low Gate Charge (Typ 152nC) Improved dv/dt Capability 100% Avalanche Tested Application:Charger,LED,PC Power
TO-247
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.