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K4N51163QZ - 512Mbit gDDR2 SDRAM

General Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.

graphic double-data-rate transfer rates of up to 500MHz for general applications.

Key Features

  • 1.8V + 0.1V power supply for device operation.
  • 1.8V + 0.1V power supply for I/O interface.
  • 4 Banks operation.
  • Posted CAS.
  • Programmable CAS Letency : 5, 6, 7.
  • Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6.
  • Write Latency (WL) = Read Latency (RL) -1.
  • Burst Legth : 4 and 8 (Interleave/nibble sequential).
  • Programmable Sequential/ Interleave Burst Mode.
  • Bi-directional Differential Data-Strobe (Single-ende.

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Full PDF Text Transcription for K4N51163QZ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4N51163QZ. For precise diagrams, and layout, please refer to the original PDF.

K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED...

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) Revision 1.3 September 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

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