K4J55323QF-GC15 - 256Mbit GDDR3 SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4J55323QF-GC15
Manufacturer	Samsung
File Size	1.00 MB
Description	256Mbit GDDR3 SDRAM
Datasheet	K4J55323QF-GC15 Datasheet
Note	This datasheet PDF includes multiple part numbers: K4J55323QF-GC15, K4J. Please refer to the document for exact specifications by model.
Additional preview pages of the K4J55323QF-GC15 datasheet.

Product details

Description

FOR 2M x 32Bit x 4 Bank GDDR3 SDRAM The 8Mx32 GDDR3 is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.Synchronous

Features

2.0V + 0.1V power supply for device operation.
2.0V + 0.1V power supply for I/O interface.
On-Die Termination (ODT).
Output Driver Strength adjustment by EMRS.
Calibrated output drive.
Pseudo Open drain compatible inputs/outputs.
4 internal banks for concurrent operation.
Differential clock inputs (CK and CK).
Commands entered on each positive CK edge.
CAS latency : 5, 6, 7, 8 and 9 (clock).
Addit.

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Published: Apr 25, 2005 |