Datasheet Details
| Part number | K4E661612D |
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| Manufacturer | Samsung Semiconductor |
| File Size | 397.47 KB |
| Description | CMOS DRAM |
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This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
| Part number | K4E661612D |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 397.47 KB |
| Description | CMOS DRAM |
| Datasheet |
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|
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4E661612D. For precise diagrams, and layout, please refer to the original PDF.
Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data...
| Part Number | Description |
|---|---|
| K4E661612B | 4M x 16bit CMOS Dynamic RAM |
| K4E661612C | 4M x 16bit CMOS Dynamic RAM |
| K4E660412D | 16M x 4bit CMOS Dynamic RAM |
| K4E660812B | 8M x 8bit CMOS Dynamic RAM |
| K4E660812C | 8M x 8bit CMOS Dynamic RAM |
| K4E640412D | 16M x 4bit CMOS Dynamic RAM |
| K4E640812B | 8M x 8bit CMOS Dynamic RAM |
| K4E640812C | 8M x 8bit CMOS Dynamic RAM |
| K4E641612B | 4M x 16bit CMOS Dynamic RAM |
| K4E641612C | 4M x 16bit CMOS Dynamic RAM |