Datasheet4U Logo Datasheet4U.com

K4E640812C - 8M x 8bit CMOS Dynamic RAM

General Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📥 Download Datasheet

Full PDF Text Transcription for K4E640812C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4E640812C. For precise diagrams, and layout, please refer to the original PDF.

K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Ext...

View more extracted text
s a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES •

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung semiconductor Logo K4E640812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out Samsung semiconductor

More Datasheets from Samsung Semiconductor

Part Number Description
K4E640812B 8M x 8bit CMOS Dynamic RAM
K4E640412D 16M x 4bit CMOS Dynamic RAM
K4E641612B 4M x 16bit CMOS Dynamic RAM
K4E641612C 4M x 16bit CMOS Dynamic RAM
K4E641612D CMOS DRAM
K4E660412D 16M x 4bit CMOS Dynamic RAM
K4E660812B 8M x 8bit CMOS Dynamic RAM
K4E660812C 8M x 8bit CMOS Dynamic RAM
K4E661612B 4M x 16bit CMOS Dynamic RAM
K4E661612C 4M x 16bit CMOS Dynamic RAM