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S524C80D41 - 1K/2K/4K/8K-bit Serial EEPROM

Description

Name A0, A1, A2 VSS SDA Type Input

I/O Description Input pins for device address selection.

To configure a device address, these pins should be connected to the VCC or VSS of the device.

Ground pin.

Features

  • I2C-Bus Interface.
  • Two-wire serial interface Automatic word address increment Operating Characteristics.
  • Operating voltage.
  • 2.5 V to 5.5 V (write).
  • 2.2 V to 5.5 V (read) EEPROM.
  • 1K/2K/4K/8K-bit (128/256/512/1,024-byte) storage area 16-byte page buffer Typical 3.5 ms write cycle time with auto-erase function Hardware-based write protection for the entire EEPROM (using the WP pin) EEP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S524C20D11/20D21/80D41/80D81 1K/2K/4K/8K-bit Serial EEPROM Data Sheet OVERVIEW The S524C20D11/20D21/80D41/80D81 serial EEPROM has a 1,024/2,048/4,096/8,192-bit (128/256/512/1,024byte) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’ s most advanced CMOS technology. One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using onepage write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524C20D11/20D21/80D41/80D81 is its support for fast mode and standard mode.
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