Datasheet Details
| Part number | M470T6554CZ0 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 270.34 KB |
| Description | DDR2 Unbuffered SODIMM |
| Datasheet |
 M470T6554CZ0 Datasheet
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General Description
Pin Name
CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL
Function
Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Add
Key Features
- Performance range D6(DDR2-667) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 667 667 4-4-4 E6(DDR2-667) 400 533 667 5-5-5 D5(DDR2-533) 400 533 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
- JEDEC standard 1.8V ± 0.1V Power Supply.
- VDDQ = 1.8V ± 0.1V.
- 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin.
- 4 independent internal banks.
- Posted CAS.
- Programmable CAS Latency: 3, 4, 5.