M470T2953Bxx - 200pin Unbuffered SODIMM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	M470T2953Bxx
Manufacturer	Samsung semiconductor
File Size	328.21 KB
Description	200pin Unbuffered SODIMM
Datasheet	M470T2953Bxx Datasheet
Additional preview pages of the M470T2953Bxx datasheet.

Product details

Description

Pin Name CK0,CK1 CK0,CK1 CKE0,CKE1 RAS CAS WE S0,S1 A0~A9, A11~A13 A10/AP BA0,BA1 ODT0,ODT1 SCL Function Clock Inputs, positive line Clock Inputs, negative line Clock Enables Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs Address Input/Autoprecharge SDRAM Bank Address On-die termination control Serial Presence Detect(SPD) Clock Input Pin Name SDA SA1,SA0 DQ0~DQ63 DM0~DM7 DQS0~DQS7 DQS0~DQS7 TEST VDD VSS VREF VDDSPD NC SPD Data Input/Output SPD address Data In

Features

Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps CK.
JEDEC standard 1.8V ± 0.1V Power Supply.
VDDQ = 1.8V ± 0.1V.
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
4 Banks.
Posted CAS.
Programmable CAS Latency: 3, 4, 5.
Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
Write Latency(WL) = Read Latency(RL) -1.
Burst Length: 4.

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Published: Sep 27, 2005 |